Device Design and Packaging Award
Makers of flagship smartphones seek to squeeze the highest levels of functionality and performance into ultra-slim handsets. Because these high-end phones are designed for global or super-regional use they also need to integrate support for many different regional LTE bands as well as multiple carrier aggregation (CA band combinations.
Many applications require isolated power supplies protected from electromagnetic interferences (EMI noise. Strong galvanic isolation is necessary against lightning high voltages ground faults EMI and RF noises. This present constraining challenges for utilities transmission towers medical automotive and telecom equipment manufacturers. For example, more compact Power Control Units (PCU capable of delivering more isolated power are required to increase the range of electric vehicles). Prior-art transformer-based technologies can be bulky and insufficient for demanding EMI control. Next Gen isolated power supply solutions are necessary for this rapidly growing market. Power Over Fibre applications require more available power and higher efficiencies.
Wolfspeed’s new high performance SiC power module utilizes the standard 62 mm mounting pattern but reimagines the remaining package to provide higher maximum current capability higher power density and lower inductance than previous SiC modules. These packaging innovations enable significant volumetric and power density improvements previously unimaginable for traditional power electronics systems such as those used in industrial aerospace and automotive motor drive applications. To harness the high temperature and low loss capabilities of SiC in this device Wolfspeed developed a unique low-inductance high-temperature multi-chip power module package around their SiC MOSFETs to enable operation up to a maximum junction and ambient temperature of 175°C which far exceeds the maximum temperature capability attainable with silicon (Si IGBT modules. The high-performance package incorporates a low parasitic design resulting in just 5nH of power loop inductance for ultra-high-speed switching which is a 2–5x reduction over traditional modules. The novel package design also allows users to tailor the number of SiC MOSFETs and diodes per switch position without a packaging redesign. The CAS325M12HM2’s standard half-bridge configuration is seven Gen2 1200V 25mΩ MOSFETs with six 1200V 50A anti-parallel Schottky barrier diodes per switch position. However, the device configuration and topology can be tailored to meet the customer’s performance targets by accommodating up to 12 Gen2 1200V 25mΩ MOSFETs per switch position. The 1200V/325A power module exhibits extremely low on-resistance of 4mΩ at room temperature and less than 8mΩ at 175°C junction temperature ensuring that the module exhibits low losses over temperature. The ultra-fast switching performance of the power module features 50ns rise and fall times with extremely little overshoot due to the ultra-low parasitic design.
Substrates and Materials Award
Disco Corporation, has developed a laser ingot slicing method called Kabra (Key Amorphous-Black Repetitive Absorption) for high-speed production of SiC wafers.
The existing methods for slicing wafers from a SiC ingot typically use diamond wire saws. The processing time is long due to the high rigidity of SiC. Moreover, the number of wafers produced is small due to the amount of material lost in the slicing sections.
The Kabra process forms a flat light-absorbing separation layer at a specified depth by irradiating a continuous, vertical laser from the upper surface of the SiC and creating wafers.
Element Six’s TM200 is the highest thermal conductivity bulk heat spreader material available in the market with room temperature thermal conductivity 2000 W/mK (more than 5x copper or 10x other commonly used ceramic materials.
Element Six has developed specialized chemical vapor deposition (CVD processes to produce free standing diamond substrates that deliver this market leading thermal conductivity. Designed to enable extreme performance thermal packaging for use in high power or high power density devices TM200 enables increased power and reliability and reduced system size.
High-volume Manufacturing Award
Lam Research has introduced atomic layer etching (ALE capability to its Flex dielectric etch systems). Enabled by Lam’s proprietary Advanced Mixed Mode Pulsing (AMMP technology the new ALE process has demonstrated the atomic-level control needed to address key challenges in scaling logic devices to 10 nm and below.
Last year Oxford Instruments announced the development of a SiC via plasma etch process using its PlasmaPro100 Polaris system.
Advancing semiconductor technology, X-FAB Silicon Foundries put itself at the vanguard of wide-bandgap semiconductor production last year by announcing the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas.
MOSFET scaling has for several decades been the main path to increase the performance of Si CMOS technology. As a result, the transistor density in the circuits has steadily increased. Since the subthreshold swing (S) for a thermionic
device does not scale below 60 mV/dec., this has resulted in increased power density, which has become the main limitation.
Scientists at IBM Research GmbH achieved the first demonstration of an InGaAs/SiGe CMOS technology on Si substrate using processes suitable for high-volume manufacturing on 300 mm wafers. InGaAs/SiGe hybrid integration is the main path to enable further improvement of power/performance trade off metrics for digital technologies beyond the 7 nm node. Based on selective epitaxy their approach yielded functional inverters and dense arrays of 6T-SRAMs the basic blocks of digital CMOS circuits.
|Nominations open||25th November 2016|
|Nominations close||9th January 2017|
|Shortlist announced||16th January 2017|
|Voting opens||16th January 2017|
|Voting closes||21st February 2017|
|Winners informed||21st February 2017|
|Awards ceremony||7th March 2017|
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