Makers of flagship smartphones seek to squeeze the highest levels of functionality and performance into ultra-slim handsets. Because these high-end phones are designed for global or super-regional use they also need to integrate support for many different regional LTE bands as well as multiple carrier aggregation (CA band combinations.
Element Six’s TM200 is the highest thermal conductivity bulk heat spreader material available in the market with room temperature thermal conductivity 2000 W/mK (more than 5x copper or 10x other commonly used ceramic materials. Element Six has developed specialized chemical vapor deposition (CVD processes to produce free standing diamond substrates that deliver this market leading thermal conductivity. Designed to enable extreme performance thermal packaging for use in high power or high power density devices TM200 enables increased power and reliability and reduced system size.
Last year Oxford Instruments announced the development of a SiC via plasma etch process using its PlasmaPro100 Polaris system.
Scientists at IBM Research GmbH achieved the first demonstration of an InGaAs/SiGe CMOS technology on Si substrate using processes suitable for high-volume manufacturing on 300 mm wafers. InGaAs/SiGe hybrid integration is the main path to enable further improvement of power/performance trade off metrics for digital technologies beyond the 7 nm node. Based on selective epitaxy their approach yielded functional inverters and dense arrays of 6T-SRAMs the basic blocks of digital CMOS circuits.
|Nominations open||25th November 2016|
|Nominations close||9th January 2017|
|Shortlist announced||16th January 2017|
|Voting opens||16th January 2017|
|Voting closes||21st February 2017|
|Winners informed||21st February 2017|
|Awards ceremony||7th March 2017|
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