Innovation Award
Veeco GENxcel R&D MBE System

The GENxcel RD MBE system is a revolutionary new system designed specifically for compound semiconductor RD and pilot production markets. The GENxcel produces high quality epitaxial layers on substrates up to 100mm diameter for a wide variety of applications and materials including GaAs, InP, nitrides, and oxides. With an innovative architectural concept, the GENxcel system records a number of industry firsts. With an innovative architectural concept, the GENxcel system records a number of industry firsts. It is the first MBE system designed specifically for integrating multiple epitaxial techniques. This gives the ability to transfer wafers in-situ from the MBE system to other processes such as atomic layer deposition (ALD) providing the opportunity for novel compound semiconductor research. It is also the first MBE system designed with EtherCAT protocol, improving ease-of-use and reliability while also allowing easier serviceability. All of these features have been incorporated in the systems efficient single frame design that combines all vacuum hardware and on-board electronics to make it up to 40% smaller than other 100mm wafer MBE systems, saving valuable laboratory space.

NOMINEES Advanced Energy, Panasonic Corporation, Qorvo

Device Design and Packaging Award
Wolfspeed All-SiC Modules for High Voltage Applications

With funding assistance from PowerAmerica, Wolfspeed developed first-of-its-kind SiC power modules for 3.3 kV and 10 kV applications. According to the company, this is the first SiC power module at these voltage levels to use exclusively the MOSFET built-in body diode as the anti-parallel rectifier. A built-in diode has numerous advantages over an external and additional diode device. The built-in diode or 'body diode' design maximises the performance of SiC MOSFET modules by freeing up space in the power module, allowing for more power capability and therefore increased performance in a smaller space. It also makes assembling a power module easier, boosting long-term reliability and optimising costs.

NOMINEES POET, Dowa Electronic Materials

High-volume Manufacturing Award
Beneq Oy Beneq C2

Beneq C2 is the automated wafer solution in Beneq’s Cluster-compatible equipment portfolio. It offers a unique combination of high capacity batch ALD processing and standard cassette-to-cassette automation.Beneq C2 provides an optimal solution for high performance ALD on wafers in industrial applications, such as optical coatings, insulators and barriers, and high-volume manufacturing of wafer coatings in the semiconductor and MEMS industry. The new product has been designed with special focus on emerging More than Moore semiconductor markets, such as Power and RF devices, RF and Piezoelectric MEMS, MEMS sensors and actuators, image Sensors, LED and OLED. The thermal batch ALD process of Beneq C2 is ideal for oxide and nitride processes used for dielectric, conductor, barrier and passivation purposes. The new automated cluster solutions have been designed for industrial ALD applications where high capacity is needed. The number of wafers that can be processes with the new tool is massive compared to traditional ALD equipment. It brings both the speed and operation costs of Atomic Layer Deposition to a completely new level that makes full-blown wafer ALD production finally possible.

NOMINEES Monocrystal, Inc, Navitas Semiconductor, Veeco And Allos

Metrology Award
KLA-Tencor Corporation Zeta Optical Profiler for Patterned Sapphire Substrate Metrology

The Zeta Optical Profiler is designed to provide maximum configuration flexibility and enhanced measurement sensitivity and repeatability. The low noise floor of the Zeta Optical Profiler makes it suitable for nm level step height and roughness measurements. Based on proprietary ZDotâ„¢ technology, multiple broadband white light High Brightness LED light sources enable simultaneous acquisition of surface metrology data and substrate color information. ZDot optical profiling technology overcomes the disadvantages of white light interferometry with an optical design that has high light throughput and is inherently insensitive to vibration and sample tilt. High light throughput and optical efficiency are also essential for surfaces that have diffuse reflectivity or features with a high slope, such as the cones on patterned sapphire substrates (PSS). The flexible configuration of the ZDot optics also enables automated macro defect inspection of PSS wafers.

NOMINEES IMS Chips, Horiba Scientific, Rohm Semiconductor

Substrates and Materials Award
ALLOS Semiconductors 1400 V GaN-on-Silicon Epiwafers

A team from IEMN research institute in France has made devices and conducted measurements on two different GaN-on-Si epiwafer products supplied by ALLOS Semiconductors of Germany. One is a prototype of ALLOS’ upcoming product specifically designed for 1200 V device applications. With this epiwafer IEMN achieved over 1400 V for vertical and 1600 V for lateral (grounded) breakdown. The other epiwafer established product for 600 V applications which equally showed very high breakdown voltages of 1200 V and more for both lateral and vertical measurements.

NOMINEES Brook Instruments, Kyma Technologies, Norstel AB, Sumitomo Electric

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